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| PD - 95943A AUTOMOTIVE MOSFET IRFR2905ZPBF IRFU2905ZPbF HEXFET(R) Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V G S RDS(on) = 14.5m ID = 42A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR2905Z Max. 59 42 42 240 110 0.72 20 I-Pak IRFU2905Z Units A Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw W W/C V mJ A mJ h 55 82 See Fig.12a, 12b, 15, 16 -55 to + 175 g C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance RJC RJA RJA Junction-to-Case j Parameter Typ. Max. 1.38 40 110 Units C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient j ij --- --- --- HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 12/14/04 IRFR/U2905ZPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Input Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 --- --- 2.0 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.053 11.1 --- --- --- --- --- --- 29 7.7 12 1.3 14 66 31 35 4.5 7.5 1380 240 120 820 190 300 --- --- 14.5 4.0 --- 20 250 200 -200 44 --- --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 36A e V S A VDS = VGS, ID = 250A VDS = 25V, ID = 36A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 36A VDS = 44V VGS = 10V VDD = 28V ID = 36A RG = 15 VGS = 10V e e D G S f = 1MHz, open drain Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 23 16 36 A 240 1.3 35 24 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 36A, VGS = 0V TJ = 25C, IF = 36A, VDD = 28V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U2905ZPbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 4.5V 1 4.5V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 1 0.1 0 1 1 60s PULSE WIDTH Tj = 175C 10 10 100 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 50 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () T J = 175C 40 100.0 T J = 175C 30 T J = 25C 20 10.0 T J = 25C VDS = 25V 60s PULSE WIDTH 1.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 10 VDS = 15V 380s PULSE WIDTH 0 0 10 20 30 40 50 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRFR/U2905ZPbF 2400 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID= 36A VDS= 44V VDS= 28V VDS= 11V 2000 VGS, Gate-to-Source Voltage (V) 16 C, Capacitance (pF) 1600 Ciss 1200 12 8 800 4 FOR TEST CIRCUIT SEE FIGURE 13 400 Coss Crss 0 1 10 100 0 0 10 20 30 40 50 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD, Source-toDrain Voltage (V) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100sec 1 Tc = 25C Tj = 175C Single Pulse 1 10 1msec 10msec 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U2905ZPbF 70 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE 60 ID , Drain Current (A) ID = 36A VGS = 10V 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 1 2 Ri (C/W) i (sec) 0.3962 0.00012 0.5693 0.00045 0.4129 0.0015 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Ci= i/Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U2905ZPbF EAS, Single Pulse Avalanche Energy (mJ) 15V 240 200 VDS L DRIVER ID 36A 8.6A BOTTOM 4.8A TOP 160 RG 20V VGS D.U.T IAS tp + V - DD A 120 0.01 80 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 40 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD VGS(th) Gate threshold Voltage (V) 4.5 4.0 Charge 3.5 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250A 3.0 50K 12V .2F .3F 2.5 D.U.T. VGS 3mA + V - DS 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRFR/U2905ZPbF 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 60 EAR , Avalanche Energy (mJ) 50 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 36A 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRFR/U2905ZPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs RD V DS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRFR/U2905ZPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 916A 34 ASSEMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFU120 12 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE ASSEMBLY LOT CODE www.irf.com 9 IRFR/U2905ZPbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S E MBLE D ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line pos ition indicates "Lead-Free" PART NUMBER INTE RNAT IONAL RECT IF IER LOGO IRFU120 919A 56 78 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR PART NUMBE R INT ERNAT IONAL RECTIF IER LOGO IRFU120 56 78 AS SEMBLY LOT CODE DATE CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPTIONAL) YEAR 9 = 1999 WE EK 19 A = ASS EMBLY SIT E CODE 10 www.irf.com IRFR/U2905ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.08mH Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 36A, VGS =10V. Part not avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% Pulse width 1.0ms; duty cycle 2%. tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. Notes: IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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